Optimization of N-PERT Solar Cell under Atacama Desert Solar Spectrum.

In the Atacama Desert, the spectral distribution of solar radiation differs from the global standard, showing very high levels of irradiation with a particularly high ultraviolet content. Additionally, the response of photovoltaic (PV) technologies is spectrally dependent, so it is necessary to consider local conditions and type of technology to optimize PV devices since solar cells are usually designed for maximum performance under standard testing conditions (STC). In this work, we determined geometrical and doping parameters to optimize the power of an n-type bifacial passivated emitter and rear totally diffused solar cell (n-PERT). Six parameters (the thicknesses of cell, emitter, and back surface field, as well as doping concentration of emitter, base, and back surface field) were used to optimize the cell under the Atacama Desert spectrum (AM 1.08) and under standard conditions (AM 1.5) through a genetic algorithm. To validate the model, the calculated performance of the n-PERT cell was compared with experimental measurements. Computed and experimental efficiencies showed a relative difference below 1% under STC conditions. Through the optimization process, we found that different geometry and doping concentrations are necessary for cells to be used in the Atacama Desert. Reducing the thickness of all layers and increasing doping can lead to a relative increment of 5.4% in the cell efficiency under AM 1.08. Finally, we show the potential effect of metallization and the viability of reducing the thicknesses of the emitter and the back surface field.

Unoccupied Interface and Molecular States in Thiol and Dithiol Monolayers.

The electronic structure of self-assembled monolayers (SAMs) formed by thiols of different lengths and dithiol molecules bound to Au(111) has been characterized. Inverse photoemission spectroscopy (IPES) and density functional theory have been used to describe the molecule/Au substrate system. All molecular layers display a clear signal in the IPES data at the edge of the lowest unoccupied system orbital (LUSO), roughly 3 eV above the Fermi level. There is also evidence, in both the experimental data and the calculation, of a finite density of states just below the LUSO edge, which has been recognized as localized at the Au-substrate interface. Regardless of the molecular lengths and in addition to this induced density of interface states, an apparent antibonding Au-S state has been identified in the IPES data for both molecular systems. The main difference between the electronic structures of thiol and dithiol SAMs is a shift in the energy of the antibonding state.